Contact Resistance of Ti-Si-C-Ag and Ti-Si-C-Ag-Pd Nanocomposite Coatings

Sputtring av Ti-Si-C-Ag-beläggningar från sammansatta sputterkällor

Abstract Today gold is used as contact material on electric contacts for low current applications. Gold, however, has low wear resistance, is expensive and environmentally stressful to produce. An alternative contact material to gold is nano composite Ti-Si-C-Ag deposited with DC-magnetron sputtering. Nano composite Ti-Si-C-Ag has so far been deposited by a compound Ti-Si-C sputter target with ...

Multifunctional nanostructured Ti-Si-C thin films

In this Thesis, I have investigated multifunctional nanostructured Ti-Si-C thin films synthesized by magnetron sputtering in the substrate-temperature range from room temperature to 900 °C. The studies cover high-temperature growth of Ti3SiC2 and Ti4SiC3, low-temperature growth of Ti-Si-C nanocomposites, and Ti-Si-C-based multilayers, as well as their electrical, mechanical, and thermal-stabili...

Synthesis and Characterization of Ti-Si-C-N Nanocomposite Coatings Prepared by a Filtered Vacuum Arc with Organosilane Precursors

Me-Si-C (Me= Nb, Ti or Zr) Nanocomposite and Amorphous Thin Films

...............................................................................................................i Preface................................................................................................................iii Included papers ..................................................................................................v Acknowledgements................................

Basic structure and formation mechanism of Ti-Si-N superhard nanocomposite coatings

With the concept of digital factory, a research including experiment, kinetic Monte Carlo simulation, and ab initio calculation has been conducted to investigate the basic structure and the formation mechanism of Ti-Si-N superhard nanocomposite coatings. In sputtering PVD process, ion mass spectra and deposition rates have been measured. The measurement results show that the Ti-Si-N deposition ...